GaN-on-Silicon LED Recognized by Lighting Society

October 3, 2014 By Linda Hardesty

Lattice energy manageLatticePower’s new GaN-on-Silicon PAR38 LED lamp has been recognized by the Illuminating Engineering Society (IES) Progress Committee as providing an important advancement in lighting.

Lattice Power says growing GaN material on a silicon substrate has been a vexing problem for the industry as a result of the material lattice mismatch and thermal expansion mismatch between GaN thin film and silicon substrate. These mismatches contribute to defects in the material, cracking on the wafer and poor quantum efficiency.

By developing a series of proprietary technologies to overcome the mismatch problems, Lattice Power is able to manufacture consistent quality LEDs. The company’s GaN-based LEDs on silicon substrate offer high light density and better thermal dissipation.

As a vertically integrated company, LatticePower designs, engineers and manufactures the components in its lighting products.

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